Type Designator: FQD5N15
6978 Mosfet Wiring
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Single N-Channel 150 V 42 mOhm 40 nC HEXFET® Power Mosfet - D2PAK IRFS4615 - 12V-300V N-Channel Power MOSFET MOSFET, N-CH, 150V, 33A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.0345ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power RoHS. Jual AON6978 AO6978 6978 MOSFET dengan harga Rp25.000 dari toko online multitech-computer, Kota Pontianak. Cari produk Mainboard Laptop lainnya di Tokopedia. Jual beli online aman dan nyaman hanya di.
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Maximum Power Dissipation (Pd): 30 W
Maximum Drain-Source Voltage |Vds|: 150 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Drain Current |Id|: 4.3 A
Maximum Junction Temperature (Tj): 150 °C
Videopad nch software registration code. Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm
Package: TO252
FQD5N15 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQD5N15 Datasheet (PDF)
0.1. fqd5n15tf fqd5n15tm.pdf Size:808K _fairchild_semi
October 2008QFET 150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.3A, 150V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.4 nC)planar stripe, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technology has been especial
0.2. fqd5n15.pdf Size:840K _fairchild_semi
November 2013FQD5N15N-Channel QFET MOSFET150 V, 4.3 A, 800 m Description FeaturesThis N-Channel enhancement mode power MOSFET is 4.3 A, 150 V, RDS(on) = 800 m (Max.) @ VGS = 10 V,produced using Fairchild Semiconductors proprietary ID = 2.15 Aplanar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 5.4 nC)MOSFET technology has been especially tai
9.1. fqd5n20ltf fqd5n20ltm fqd5n20l fqu5n20l.pdf Size:618K _fairchild_semi
October 2008QFETFQD5N20L / FQU5N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology is especia
9.2. fqd5n60ctf fqd5n60ctm fqd5n60c fqu5n60c fqu5n60ctu.pdf Size:636K _fairchild_semi
October 2008QFETFQD5N60C / FQU5N60C 600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especia
9.3. fqd5n50.pdf Size:548K _fairchild_semi
TIGER ELECTRONIC CO.,LTD500V N-Channel MOSFETFQD5N50DESCRIPTIONThese N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche an
9.4. fqd5n20 fqu5n20.pdf Size:695K _fairchild_semi
April 2000TMQFETQFETQFETQFETFQD5N20 / FQU5N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology Marvel spider man ps4 emulator pc download.
9.5. fqd5n40tf fqd5n40tm fqu5n40tu.pdf Size:730K _fairchild_semi
April 2000TMQFETQFETQFETQFETFQD5N40 / FQU5N40400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.4A, 400V, RDS(on) = 1.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 7.0 pF)This advanced technology
9.6. fqd5n20tf.pdf Size:690K _fairchild_semi
April 2000TMQFETQFETQFETQFETFQD5N20 / FQU5N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology
9.7. fqd5n30 fqu5n30.pdf Size:757K _fairchild_semi
May 2000TMQFETQFETQFETQFETFQD5N30 / FQU5N30300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.4A, 300V, RDS(on) = 0.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.8 nC)planar stripe, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology h
9.8. fqd5n50tf fqu5n50tu.pdf Size:768K _fairchild_semi
April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.5A, 500V, RDS(on) = 1.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 8.5 pF)This advanced technology
9.9. fqu5n40 fqd5n40.pdf Size:735K _fairchild_semi
April 2000TMQFETQFETQFETQFETFQD5N40 / FQU5N40400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.4A, 400V, RDS(on) = 1.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 7.0 pF)This advanced technology
9.10. fqd5n30tf fqd5n30tm.pdf Size:752K _fairchild_semi
May 2000TMQFETQFETQFETQFETFQD5N30 / FQU5N30300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.4A, 300V, RDS(on) = 0.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.8 nC)planar stripe, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology h
9.11. fqd5n50c fqd5n50ctf fqd5n50ctm fqd5n50c fqu5n50c fqu5n50ctu.pdf Size:664K _fairchild_semi
October 2008QFETFQD5N50C / FQU5N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.0A, 500V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18nC)planar stripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially
Datasheet: FDD16AN08_F085, FQPF7P20, FQPF85N06, FQPF8N60C, FDD24AN06L_F085, FQPF8N60CF, FDMS7680, FQPF8N80C, TPC8107, FQPF8N90C, FQPF9N25C, FQPF9N50CF, FQPF9N90C, FQPF9P25, FQS4900, FCI25N60N, FQS4901.
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Dynamic security enabled printer. Only intended to be used with cartridges using an HP original chip. Cartridges using a non-HP chip may not work, and those that work today may not work in the future.
http://www.hp.com/go/learnaboutsupplies6978 Mosfet Datasheet Pdf
Ideal for the home office or small workgroups that need professional-quality, affordable color with powerful productivity and fast functionality.
Easily print when and where you need to from your smartphone, tablet, or notebook PC.[1] Get up and running right out of the box,[2] and connect the way you want to with Ethernet and wireless networking.[4]
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One-year limited hardware warranty; For more info please visit us at http://support.hp.com
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[2] Requires HP All-in-One Printer Remote mobile app download and is compatible with iPhone® 4 and later, iPad® 4th generation, iPad mini™, iPad Air®, iPod®, and mobile devices using Android™ 4.0.3 or later. For a full list of supported operating systems, see hp.com/go/mobileprinting
[4] Wireless performance depends on physical environment and distance from access point and may be limited during active VPN connections.
[6] HP JetAdvantage Private Print is available at no charge and requires that the printer be connected to the Internet with web services enabled. Not available in all countries. For more information, see hpjetadvantage.com
[8] Compared with the majority of color laser AiOs < $300 excluding VAT as of October 2015; market share as reported by IDC as of Q2 2015.
[10] Savings claim is based on HP Instant Ink Service plan price for 12 months using all pages in plan without purchase of additional pages compared with the cost per page (CPP) of the majority of color inkjet printers <$399 USD, market share reported by IDC CYQ3 2015. CPP comparisons for standard-capacity inkjet supplies are based on estimated street price and page yield as reported by gap intelligence AiO Weekly and IJP Weekly Report 12/13/15. Actual savings may vary depending on number of pages actually printed per month and content of pages printed.
[12] Local printing requires mobile device and printer be on the same network or have a direct wireless connection. AirPrint® is supported on any iPhone®, iPad®, or iPod® using iOS v4.2 and higher. Remote printing requires an Internet connection to an HP web-connected printer. For details on how to print, including whether an app is required, see hp.com/go/mobileprinting
© Copyright 2016 HP Development Company, L.P. The information contained herein is subject to change without notice. The only warranties for HP products and services are set forth in the express warranty statements accompanying such products and services. Nothing herein should be construed as constituting an additional warranty. HP shall not be liable for technical or editorial errors or omissions contained herein. ENERGY STAR and the ENERGY STAR logo are registered U.S. marks. Windows is a registered trademark of Microsoft Corporation. AirPrint, iPad, iPhone, and iPod touch are trademarks of Apple Inc., registered in the U.S. and other countries.
6978 Mosfet Manual
[14] Local printing requires mobile device and printer to be on the same network or have a direct wireless connection to the printer. Wireless performance is dependent on physical environment and distance from access point. Wireless operations are compatible with 2.4 GHz operations only. Remote printing requires an Internet connection to an HP web-connected printer. App or software and HP ePrint account registration may also be required. Wireless broadband use requires separately purchased service contract for mobile devices. Check with service provider for coverage and availability in your area. Learn more at hp.com/go/mobileprinting.
[3] Power requirements are based on the country/region where the printer is sold. Do not convert operating voltages. This will damage the printer and void the product warranty.
[5] Speed specifications have been updated to reflect current industry testing methods.
6978 Mosfet Drive
6978 Mosfet